Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes

نویسندگان

چکیده

Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that thin can reduce absorption electrodes achieve high reflectivity Ohmic contact to ensure enhancement maintain fine electrical properties. By this approach, maximum external quantum DUV-LEDs with optimized reflective increased 40%, compared conventional Ni/Au over whole current range.

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ژورنال

عنوان ژورنال: IEEE Photonics Journal

سال: 2023

ISSN: ['1943-0655', '1943-0647']

DOI: https://doi.org/10.1109/jphot.2023.3250433